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pd-97742 revb www.irf.com 1 IRAM136-1561A series 15a, 600v with open emitter pins description international rectifier's IRAM136-1561A is a 15a, 600v integrated power hy brid ic with open emitter pins for advanced appliance motor drives applications such as energy efficient washing machine and refrigerator compressor drivers. ir's technology offers an extrem ely compact, high performa nce ac motor-driver in a single isolated package to simplify design. this advanced hic is a combination of ir's low v ce (on) trench igbt technology and the industry benchmark 3 phase high voltage, high speed driver (3.3v compatible ) in a fully isolated ther mally enhanced package. a built-in high precision temperature monitor and over-cu rrent protection feature, along with the short-circuit rated igbts and integrated under-vo ltage lockout function, deliver high level of protection and fail-safe operation. using a single in line package with full tr ansfer mold structure and cti>600 minimizes pcb space and resolves isolation problems to heatsink. features x integrated gate drivers and bootstrap diodes x temperature monitor x protection shutdown pin x low v ce (on) trench igbt technology x undervoltage lockout for all channels x matched propagation delay for all channels x 3.3v schmitt-triggered input logic x cross-conduction prevention logic x motor power up to 1.5kw / 85~253 vac x isolation 2000vrms min and cti> 600 x rohs compliant x recognized by ul (file number: e252584) abs ol ute maxi mum rati ngs v ces / v rrm igbt/ fw diode blocking voltage 600 v + positive bus input voltage 450 i o @ t c =25c rms phase current (note 1) 15 i o @ t c =100c rms phase current (note 1) 7.5 i pk maximum peak phase current (note 2) 22.5 f p ma x imu m p w m c a r r ie r f r e q u e n c y 2 0 khz p d maximum power dissipation per igbt @ t c =25c 32 w v iso isolation voltage (1min) 2000 v rms t j (igbt & diode & ic) maximum operating junction temperature +150 t c operating case temperature range -20 to +100 t stg storage temperature range -40 to +125 t mounting torque range (m3 screw) 0.8 to 1.0 nm note 1: sinusoidal modulation at v + =320v, v cc =15v, t j =150c, f pwm =16khz, mi=0.8, pf=0.6, see fi g ure 4. note 2: t p <100ms, v cc =15v, t c =25c, f pwm =16khz. v a c integrated power hybrid ic for a ppliance motor drive applications
IRAM136-1561A 2 www.irf.com internal electrical schematic ? IRAM136-1561A v+ (13) vru (17) vrv (19) vrw (21) u, vs1 (10) v, vs2 (6) w, vs3 (2) 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 lin1 5 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 lo1 16 lo3 14 lo2 15 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 driver ic vb1 (9) vb2 (5) vb3 (1) hin1 (20) hin2 (22) hin3 (23) lin1 (24) lin2 (25) lin3 (26) itrip (16) flt/en (18) vth (27) vcc (28) vss (29) q1 q4 q2 q3 q5 q6 d1 d4 d2 d3 d5 d6 r1 r4 r2 r3 r5 r6 r9 r8 r7 d9 d8 d7 c1 c2 c3 c4 c5 c6
IRAM136-1561A www.irf.com 3 absolute maximum ratings (continued) symbol parameter min max units conditions i bdf bootstrap diode peak forward current --- 1.0 a t p =10ms, t j =150c, t c =100c p br peak bootstrap resistor peak power (single pulse) --- 15.0 w t p =100 s, t c =100c esr series v s1,2,3 high side floating supply offset voltage v b1,2,3 - 20 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage -0.3 600 v v cc low side and logic fixed supply voltage -0.3 20 v v in input voltage lin, hin, i trip , flt/en -0.3 lower of (v ss +15v) or v cc +0.3v v inverter section electrical characteristics symbol parameter min typ max units conditions v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v in =0v, i c =250 a ?9 (br)ces ?7 temperature coeff. of breakdown voltage --- 0.3 --- v/c v in =0v, i c =1ma ( 25c - 150c ) --- 1.5 1.75 i c =7.5a, t j =25c --- 1.7 --- i c =7.5a, t j =150c --- 8 80 v in =0v, v + =600v --- 100 --- v in =0v, v + =600v, t j =150c -- 1.8 2.4 i f =7.5a --- 1.4 --- i f =7.5a, t j =150c --- 1.65 1.8 i f =1a --- 1.3 --- i f =1a, t j =150c r br bootstrap resistor value --- 22 --- ? t j =25c ?5 br /r br bootstrap resistor tolerance --- --- 5 % t j =25c c 1,2,3,4 v cc / v bs capacitor value --- 47 --- nf t j =25c c 6 itrip capacitor value --- 1 --- nf t j =25c v fm diode forward voltage drop v i ces zero gate voltage collector current ?$ v bdfm bootstrap diode forward voltage drop v v bias (v cc , v bs1 , 2 , 3 )=15v, t j =25 o c, unless otherwise specified. v ce(on) collector-to-emitter saturation voltage v
IRAM136-1561A 4 www.irf.com inverter section switching characteristics symbol parameter min typ max units conditions e on turn-on switching loss --- 260 490 e off turn-off switching loss --- 135 230 e tot total switching loss --- 395 720 e rec diode reverse recovery energy --- 25 50 t rr diode reverse recovery time --- 100 --- ns e on turn-on switching loss --- 380 --- e off turn-off switching loss --- 190 --- e tot total switching loss --- 570 --- e rec diode reverse recovery energy --- 75 --- t rr diode reverse recovery time --- 150 --- ns q g turn-on igbt gate charge --- 25 38 nc i c =12a, v + =400v, v ge =15v rbsoa reverse bias safe operating area t j =150c, i c =5a, v p =600v v + = 450v, v cc =+15v to 0v see ct3 scsoa short circuit safe operating area 5 --- --- s t j =25c, v + = 400v, v ge =+15v to 0v scsoa short circuit safe operating area 3 --- --- s t j =100c, v + = 400v, v g e =+15v to 0v scsoa short circuit safe operating area 2 --- --- s t j =150c, v + = 360v, v g e =+17.5v to 0v i csc short circuit collector current 16.5 --- --- a t j =150c, v ce = 50v, v ge =11v full square v bias (v cc , v bs1 , 2 , 3 )=15v, t j =25 o c, unless otherwise specified. j i c =7.5a, v + =400v v cc =15v, l=1.2mh energy losses include "tail" and diode reverse recovery see ct1 j i c =7.5a, v + =400v v cc =15v, l=1.2mh, t j =150c energy losses include "tail" and diode reverse recovery see ct1 recommended operating conditions driver function symbol definition min typ max units v b1,2,3 high side floating supply voltage v s +12.5 v s +15 v s +17.5 v v s1,2,3 high side floating supply offset voltage note 4 --- 450 v v cc low side and logic fixed supply voltage 13.5 15 16.5 v v itrip i trip input voltage v ss --- v ss +5 v v in logic input voltage lin, hin, flt/en v ss --- v ss +5 v hin high side pwm pulse width 1 --- --- s deadtime external dead time between hin and lin 1 --- --- s note 3: for more details, see ir21364 data sheet the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. all voltages are absolute referenced to com. the v s offset is tested with all supplies biased at 15v differential ( note 3 ) note 4: logic operational for v s from com-5v to com+600v. logic state held for v s from com-5v to com-v bs . (p lease refer to dt97-3 for more details )
IRAM136-1561A www.irf.com 5 static electrical characteristics driver function symbol definition min typ max units v in,th+ positive going input threshold for lin, hin, flt/en 2.5 --- --- v v in,th- negative going input threshold for lin, hin, flt/en --- --- 0.8 v v ccuv+, v bsuv+ v cc /v bs supply undervoltage, positive going threshold 10.6 11.1 11.6 v v ccuv-, v bsuv- v cc /v bs supply undervoltage, negative going threshold 10.4 10.9 11.4 v v ccuvh, v bsuvh v cc and v bs supply undervoltage lock-out hysteresis --- 0.2 --- v i qbs quiescent v bs supply current --- --- 150 a i qcc quiescent v cc supply current --- --- 3.2 ma i lk offset supply leakage current --- --- 50 a i in+ input bias current v in =3.3v for lin, hin, flt/en --- 100 195 a i in- input bias current v in =0v for lin, hin, flt/en -1 -- --- a i trip+ i trip bias current v t/itrip =3.3v --- 3.3 6 a i trip- i trip bias current v t/itrip =0v -1 --- --- a v(i trip )i trip threshold voltage 0.44 0.49 0.54 v v(i trip, hys) i trip input hysteresis --- 0.07 --- v r on_flt fault low on resistance --- 50 100 v bias (v cc , v bs1,2,3 )=15v, t j =25 o c, unless otherwise specified. the v in and i in parameters are referenced to com and are applicable to all six channels. (note 3) dynamic electrical characteristics symbol parameter min typ max units conditions t on input to output propagation turn- on delay time (see fig.11) --- --- 1.15 s t off input to output propagation turn- off delay time (see fig. 11) --- --- 1.15 s t filin input filter time (hin,lin) --- 310 --- ns v in =0 or v in =5v t filen input filter time (flt/en) 100 200 --- ns v in =0 or v in =5v t en en low to six switch turn-off propagation delay (see fig. 3) --- --- 1.35 sv in =0 or v in =5v, v en =0 t flt i trip to fault propagation delay 400 600 800 ns v in =0 or v in =5v, v itrip =5v t blt-itrip i trip blanking time 100 150 --- ns v in =0 or v in =5v, v itrip =5v t itrip i trip to six switch turn-off p ro p a g ation dela y ( see fi g . 2 ) --- --- 1.5 si c =7.5a, v + =300v d t internal dead time injected by driver 220 290 360 ns v in =0 or v in =5v m t matching propagation delay time (on & off) all channels --- 40 75 ns external dead time> 400ns 1.17 1.7 2.19 t c = 25c 11.51.9 t c = 100c v bias (v cc , v bs1,2,3 )=15v, t j =25oc, unless otherwise specified. driver only timing unless otherwise specified. t flt-clr post i trip to six switch turn-off clear time (see fig. 2) ms i c =7.5a, v + =300v
IRAM136-1561A 6 www.irf.com thermal and mechanical characteristics symbol parameter min typ max units conditions r th(j- c) thermal resistance, per igbt --- 3.2 3.8 r th(j- c) thermal resistance, per diode --- 5.0 6.0 r th(c- s) thermal resistance, c-s --- 0.1 --- cti comparative tracking index 600 --- --- v bkcurve curvature of module backside 0 80 --- ?p convex only inverter operating condition flat, greased surface. heatsink compound thermal conductivity 1w/mk c/w internal ntc - thermistor characteristics parameter definition min typ max units conditions r 25 resistance 44.65 47 49.35 n? t c = 25c r 125 resistance 1.27 1.41 1.56 n? t c = 125c b b-constant (25-50c) 3989 4050 4111 k r 2 = r 1 e [b(1/t2 - 1/t1)] temperature range -40 --- 125 c typ. dissipation constant --- 1 --- mw/c t c = 25c input-output logic level table flt/en i trip hin1,2,3 lin1,2,3 u,v,w 1010v+ 10010 1000off 1011off 11xxoff 0xxxoff ho lo u,v,w ic driver v + hin1,2,3 lin1,2,3 (20,22,23) (24,25,26) (10,6,2) ho lo u,v,w ic driver v + hin1,2,3 lin1,2,3 (20,22,23) (24,25,26) (10,6,2)
IRAM136-1561A www.irf.com 7 u,v,w lin1,2,3 i trip hin1,2,3 figure 1. input/output timing diagram i trip lin1,2,3 hin1,2,3 t flt-clr 50% 50% u,v,w 50% t itrip 50% flt 50% t flt figure 2. i trip timing waveform en 50% 50% u,v,w t en figure 3. output enable timing diagram note 5: the shaded area indicates that both high-side and low-side swit ches are off and therefore the half- bridge output voltage would be determined by the direction of current flow in the load.
IRAM136-1561A 8 www.irf.com module pin-out description pin name description 1 vb3 high side floating supply voltage 3 2 w,vs3 output 3 - high side floating supply offset voltage 3nanone 4nanone 5 vb2 high side floating supply voltage 2 6 v,vs2 output 2 - high side floating supply offset voltage 7nanone 8nanone 9 vb1 high side floating supply voltage 1 10 u,vs1 output 1 - high side floating supply offset voltage 11 na none 12 na none 13 v + positive bus input voltage 14 na none 15 na none 16 i trip current protection pin 17 vru low side emitter connection - phase 1 18 flt/en fault output and enable pin 19 vrv low side emitter connection - phase 2 20 hin1 logic input high side gate driver - phase 1 21 vrw low side emitter connection - phase 3 22 hin2 logic input high side gate driver - phase 2 23 hin3 logic input high side gate driver - phase 3 24 lin1 logic input low side gate driver - phase 1 25 lin2 logic input low side gate driver - phase 2 26 lin3 logic input low side gate driver - phase 3 27 v th temperature feedback 28 v cc +15v main supply 29 v ss negative main supply 1 29
IRAM136-1561A www.irf.com 9 typical application connection IRAM136-1561A 29 1 3-phase ac motor boot-strap capacitors w v u vdd (28) itrip (16) vss (29) 100nf controller v+ dc bus capacitors phase leg current sense vth (27) enable 10m current sensing can use a single sense resistor or phase leg sensing as shown 0.1m 15 v flt /en (18) IRAM136-1561A v+ (13) vru (17) vrv (19) vrw (21) hin2 (22) hin1 (20) hin3 (23) lin1 (24) lin2 (25) lin3 (26) vb3 (1) vb2 (5) vb1 (9) w, vs 3 (2) v, vs2 (6) u, vs1 (10) 5 v 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ce ramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide good decoupling between vc c-vss and vb1,2,3- vs1,2,3 terminals, the capacitors shown connected between these terminals should be loca ted very close to the module pins. additional high frequency capacitors, typically 0.1 f, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dn 98-2a, application note an -1044 or figure 11. bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with th e vcc. (see maximum ratings table on page 3). 4. after approx. 2ms the fault is reset. (s ee dynamic characteristics table on page 5). 5. pwm generator must be disabled within fault dura tion to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation.
IRAM136-1561A 10 www.irf.com 0 2 4 6 8 10 12 14 16 02468101214161820 maxim um output phase rms current - a pwm sw itching fr e quency - k hz t c = 80o c t c = 90o c t c = 100o c figure 4. maximum sinusoidal phase current vs. pwm switching frequency sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 0 1 2 3 4 5 6 7 8 9 1 10 100 maxim um output phase rms current - a modulation frequency - hz f pwm = 12khz f pwm = 16khz f pwm = 20khz figure 5. maximum sinusoidal phas e current vs. modulation frequency sinusoidal modulation, v + =400v, t j =150c, t c =100c, mi=0.8, pf=0.6
IRAM136-1561A www.irf.com 11 0 20 40 60 80 100 120 140 02468101214161820 total pow er loss- w pwm sw itching fr e quency - k hz i out = 9a i out = 7.5a i out = 6a figure 6. total power losses vs. pwm switching frequency sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 0 20 40 60 80 100 120 140 160 012345678910 total pow er loss - w output phase current - a rms f pwm = 20khz f pwm = 16khz f pwm = 12khz figure 7. total power losses vs. output phase current sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz
IRAM136-1561A 12 www.irf.com 40 60 80 100 120 140 160 012345678910 max allow able case temperature - oc output phase current - a rms f pwm = 12khz f pwm = 16khz f pwm = 20khz figure 8. maximum allowable case temper ature vs. output rms current per phase sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 109 90 100 110 120 130 140 150 160 65 70 75 80 85 90 95 100 105 110 115 igbt junction tem perature - c internal thermistor temperature equivalent read out - c t j avg = 1.14 x t therm + 26 figure 9. estimated maximum igbt junction temperature vs. thermistor temperature sinusoidal modulation, v+=400v, iphase=6ar ms, fsw=16khz, fmod=50hz, mi=0.8, pf=0.6
IRAM136-1561A www.irf.com 13 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 thermistor temperature - c thermistor pin read-out voltage - v max avg. min figure 10. thermistor readout vs. temperature (7.5kohm r ext pull-down resistor) and normal thermistor resistance values vs. temperature table. 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 5 10 15 20 pwm frequency - khz 5hfrpphqghg%rrwvwuds&dsdflwru) 10 f f f f f f figure 11. recommended bootstrap capa citor value vs. switching frequency
IRAM136-1561A 14 www.irf.com figure 12. switching parameter definitions 50% h in /l in v ce i c h in /l in t off t f 90 % i c 10 % i c 50% v ce v ce i c h in /l in t on t r 50 % h in /l in 90 % i c 10 % i c 50% v ce figure 12a. input to output propagation turn-on delay time. figure 12b. input to output propagation turn-off delay time. v ce i f h in /l in t rr i rr figure 12c. diode reverse recovery.
IRAM136-1561A www.irf.com 15 ho lo u,v,w ic driver lin1,2,3 hin1,2,3 v + i n i o figure ct1. switching loss circuit ho lo u,v,w ic driver lin1,2,3 hin1,2,3 i o v + i n i o figure ct2. s.c.soa circuit ho lo u,v,w ic driver hin1,2,3 i o lin1,2,3 v + i n i o figure ct3. r.b.soa circuit
IRAM136-1561A 16 www.irf.com package outline IRAM136-1561A missing pin : 3,4,7,8,11,12,14,15 note2 d d note3 >y >t>? IRAM136-1561A d! p 9df00 note4 note5 note1: unit tolerance is +0.5mm, fff unless otherwise specified. note2: mirror surface mark indicates pin1 identification. note3: part number marking. characters font in this drawing differs from ffff font shown on module. note4: lot code marking. characters font in this drawing differs from ffff font shown on module. note5: "p" character denotes lead free. characters font in this drawing differs from font shown on module. dimensions in mm for mounting instruction see an-1049
IRAM136-1561A www.irf.com 17 package outline IRAM136-1561A2 missing pin : 3,4,7,8,11,12,14,15 p 9df00 d d! d note3 note4 note2 >y >t>? IRAM136-1561A2 note5 note1: unit tolerance is +0.5mm, fff unless otherwise specified. note2: mirror surface mark indicates pin1 identification. note3: part number marking. characters font in this drawing differs from ffff font shown on module. note4: lot code marking. characters font in this drawing differs from ffff font shown on module. note5: "p" character denotes lead free. characters font in this drawing differs from font shown on module. dimensions in mm for mounting instruction see an-1049 data and specifications are su bject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 2013-02-13

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